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| CMHD3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD3595 is a Silicon Diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance applications requiring low leakage. MARKING CODE: C95 SOD-123 CASE MAXIMUM RATINGS: (TA=25C) Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current Continuous Forward Current Recurrent Peak Forward Current Peak Forward Surge Current, tp=1.0s Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VRRM VRWM IO IF if IFSM IFSM PD TJ, Tstg JA 150 125 150 225 600 500 4.0 400 -65 to +150 312.5 UNITS V V mA mA mA mA A mW C C/W ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL IR IR IR IR BVR VF VF VF VF VF VF CT trr TEST CONDITIONS VR=125V VR=125V, TA=125C VR=125V, TA=150C VR=30V, TA=125C IR=100A IF=1.0mA IF=5.0mA IF=10mA IF=50mA IF=100mA IF=200mA VR=0, f=1.0MHz VR=3.5V, IF=10mA, RL=1.0k 150 0.54 0.62 0.65 0.75 0.79 0.83 0.69 0.77 0.80 0.88 0.92 1.00 8.0 3.0 MIN MAX 1.0 500 3.0 300 UNITS nA nA A nA V V V V V V V pF s R5 (5-August 2010) CMHD3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE SOD-123 CASE - MECHANICAL OUTLINE LEAD CODE 1) Cathode 2) Anode MARKING CODE: C95 R5 (5-August 2010) w w w. c e n t r a l s e m i . c o m |
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